ds30578 rev. 5 - 2 1 of 5 www.diodes.com dvr1v8w - dvr5v0w ? diodes incorporated dvr1v8w - dvr5v0w dvr1v8w - dvr5v0w complex array for voltage regulators features ? epitaxial planar die construction ? selectively paired npn transistors & zener diodes for series pass voltage regulator circuits ? ideally suited for automated assembly processes ? lead free by design/rohs compliant (note 1) ? "green" device (note 2) mechanical data ? case: sot-363 ? case material: molded plastic. "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020c ? terminals: finish ? matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? marking & type code information: see page 5 ? ordering information: see page 5 ? weight: 0.008 grams (approximate) sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j ? 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 8 all dime sions in mm n a 1 e 1 k 1 nc c 1 b 1 a m j l d b c h k f ne w ododu p rpr u cc t t maximum ratings, total device @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation (note 3) p d 200 mw thermal resistance, junction to ambient (note 3) r ja 625 c/w operating and storage and temperature range t j , t stg -55 to +150 c maximum ratings, npn transistor @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo 45 v collector-emitter voltage v ceo 18 v emitter-base voltage v ebo 5 v collector current - continuous (note 3) i c 1 a maximum ratings, zener element @t a = 25c unless otherwise specified characteristic symbol value unit forward voltage @ i f = 10ma v f 0.9 v notes: 1. no purposefully added lead. 2. diodes inc?s ?green? policy can be found on our websit e at http://www.diodes.com/p roducts/lead_free/index.php. 3. part mounted on fr-4 board with re commended pad layout, which can be found on our website at http://www.diodes.com/datashee ts/ap02001.pdf.
ds30578 rev. 5 - 2 2 of 5 www.diodes.com dvr1v8w - dvr5v0w ? diodes incorporated new product electrical characteristics, npn transistor @t a = 25c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 4) collector-base breakdown voltage v (br)cbo 45 ? v i c = 100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 18 ? v i c = 1ma, i b = 0 emitter-base breakdown voltage v (br)ebo 5 ? v i e = 100 a, i c = 0 collector cutoff current i cbo ? 1 a v cb = 40v, i e = 0 emitter cutoff current i ebo ? 1 a v eb = 4v, i c = 0 on characteristics (note 4) dc current gain h fe 150 800 ? i c = 100ma, v ce = 1v collector-emitter saturation voltage v ce(sat) ? 0.5 v i c = 300ma, i b = 30ma small signal characteristics output capacitance c obo ? 8 pf v cb = 10v, f = 1.0mhz, i e = 0 current gain-bandwidth product f t 100 ? mhz v cb = 10v, i e = 50ma, f = 100mhz electrical characteristics, zener element @t a = 25c unless otherwise specified zener voltage range (note 5) maximum reverse leakage current v z @ i zt i zt i r @ v r type number nom (v) min (v) max (v) ma a v dvr1v8w 3.3 3.1 3.5 5 5 1 dvr2v5w 3.9 3.7 4.1 5 3 1 dvr3v3w 4.7 4.4 5.0 5 3 2 dvr5v0w 5.1 4.85 5.36 0.05 5 3 notes: 4. short duration test pulse used to minimize self-heating effect. 5. nominal zener voltage is measured with the device junction in thermal equilibrium at t t = 30c 1c. .
ds30578 rev. 5 - 2 3 of 5 www.diodes.com dvr1v8w - dvr5v0w ? diodes incorporated 0 50 25 50 75 100 125 150 175 200 p , p o we r dissi p a t i o n (mw) d t , ambient temperature (c) fig. 1 max power dissipation vs. ambient temperature (total device) a 100 150 200 0 1 1,000 100 0.0001 .001 .01 1 10 .1 h, d c c u r r en t g ain fe i , collector current (a) fig. 2 typical dc current gain vs. collector current (npn transistor) c v = 1.0v ce 1 100 10 0.1 1 10 100 c , o u t p u t c a p a c i t an c e (p f ) obo v , collector-base voltage (v) fig. 3 output capacitance vs. collector-base voltage (npn transistor) cb 1 10 1,000 100 0.0001 .001 .01 .1 1 10 v, c o lle c t o r -emi t t e r saturation voltage (mv) ce (sat) i , collector current (a) fig. 4 collector saturation voltage vs. collector current (npn transistor) c 0 10 20 30 40 50 01 23456 7 891 i, zene new product 0 r c u r r en t (ma) z v , zener voltage (v) fig. 5 zener breakdown characteristics (dvr1v8w - dvr3v3w) z c , total capacitance (pf) t 10 100 1,000 10 100 1 v , nominal zener voltage (v) fig. 6 total capacitance vs. nominal zener voltage (dvr1v8w - dvr3v3w) z t= 25 c f = 1mhz j v = 1v r v = 2v r v = 1v r v = 2v r
c , total capacitance (pf) t 1 10 100 10 100 1 v , nominal zener voltage (v) fig. 8 total capacitance vs. nominal zener voltage (dvr5v0w) z t = 25 c f = 1mhz j v = 2v r v =1v r ds30578 rev. 5 - 2 4 of 5 www.diodes.com dvr1v8w - dvr5v0w ? diodes incorporated new product v , zener voltage (v) fig. 7 z zener breakdown characteristics (dvr5v0w) ordering information (note 6) device packaging shipping dvr1v8w-7 sot-363 3000/tape & reel dvr2v5w-7 sot-363 3000/tape & reel dvr3v3w-7 sot-363 3000/tape & reel dvr5v0w-7 sot-363 3000/tape & reel notes: 6. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. marking information xxxx ym xxxx = product type marking code, see table above, e.g., vr01 = dvr1v8w ym = date code marking y = year ex: r = 2004 m = month ex: 9 = september date code key year 2004 2005 2006 2007 2008 2009 2010 2011 2012 code r s t u v w x y z month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sample applications vo(nom) = 5.0v q1 z1 r1 = 560r r load vcc = 6.0v dvr5v0w sample application for dvr5v0w: vcc 9 = 6.0v r1 7 = 560 vo(nom) = 5.0v io = 100ma iq(typical 8 ) = 0.5ma @ io = 0ma typical 8 vreg(load) = 0.2v from io = 100ma to 0ma
ds30578 rev. 5 - 2 5 of 5 www.diodes.com dvr1v8w - dvr5v0w ? diodes incorporated q1 z1 r1 = 370r r load vcc = 4.3v vo(nom) = 3.3v dvr3v3w sample application for dvr3v3w: vcc 9 = 4.3v r1 7 = 3700 vo(nom) = 3.3v io = 100ma iq(typical 8 ) = 0.7ma @ io = 0ma typical 8 vreg(load) = 0.21v from io = 100ma to 0ma new product q1 z1 r1 = 250r r load vcc = 3.5v vo(nom) = 2.5v dvr2v5w sample application for dvr2v5w: vcc 9 = 3.5v r1 7 = 250 vo(nom) = 2.5v io = 100ma iq(typical 8 ) = 0.91ma @ io = 0ma typical 8 vreg(load) = 0.13v from io = 100ma to 0ma q1 z1 r1 = 450r r load vcc = 2.8v vo(nom) = 1.8v dvr1v8w sample application for dvr1v8w: vcc 9 = 2.8v r17= 450 vo(nom) = 1.8v io = 100ma iq(typical 8 ) = 0.55ma @ io = 0ma typical 8 vreg(load) = 0.25v from io = 100ma to 0ma notes: 7. resistor r1 not included. 8. typical performance shown is under setup and operating conditions specified in the sample applications. 9. recommended vcc(min) ~ vo(nom) + 1v. important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the president of diodes incorporated.
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